Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 250 В 360 мА (Ta) 1,1 Вт (Ta) поверхностный монтаж SOT-89-3

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	360mA (Ta)
drain to source voltage (vdss)	250V

220 ₽

– +

Бонус: 4.4 !

Бонусная программа

Итого: 220 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 250 В 360 мА (Ta) 1,1 Вт (Ta) поверхностный монтаж SOT-89-3

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	360mA (Ta)
drain to source voltage (vdss)	250V
drive voltage (max rds on, min rds on)	0V
eccn	EAR99
fet feature	Depletion Mode
fet type	N-Channel
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	350pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 125В°C (TA)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-243AA
power dissipation (max)	1.1W (Ta)
rds on (max) @ id, vgs	4Ohm @ 200mA, 0V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SOT-89-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±15V

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CPC3703CTR