C3M0120100J, SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

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Артикул: C3M0120100J
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices.
Основные
mounting typeSurface Mount
package typeTO-263-7
minimum operating temperature-55 C
width9.12mm
3 110
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Бонус: 62.2 !
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Итого: 3 110
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Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices.
Основные
mounting typeSurface Mount
package typeTO-263-7
minimum operating temperature-55 C
width9.12mm
pin count7
maximum operating temperature+150 C
seriesC3M
Вес и габариты
number of elements per chip1
channel typeN
transistor configurationSingle
maximum drain source voltage1000 V
maximum gate source voltage+15 V, +9 V
maximum continuous drain current22 A
transistor materialSiC
maximum gate threshold voltage3.5V
maximum drain source resistance170 mΩ
channel modeEnhancement
minimum gate threshold voltage1.8V
maximum power dissipation83 W
typical gate charge @ vgs21.5 4/+15 V
forward diode voltage4.8V
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