C3M0075120J, Silicon Carbide MOSFET, C3M™ SiC МОП-транзистор, Single, N Канал, 30 А, 1.2 кВ, 0.075 О

Полупроводники - Дискретные\МОП-транзисторы\Silicon Carbide (SiC) MOSFETs & ModulesC3M0075120J SiC Power MOSFETWolfspeed C3M0075120J Silicon Carbide (SiC) Power MOSFET reduces switching losses and minimizes gate ringing. The C3M0075120J MOSFET provides 17ns of turn-on delay time (td (on) ), 1200V DS drain-source voltage, and 113.6W of power dissipation. This MOSFET offers high system efficiency, increases power density, and reduces the cooling requirements. The C3M0075120J features low on-resistance combined with a low gate charge, making it ideally suited for three-phase and bridgeless PFC topologies. The C3M0075120J SiC Power MOSFET is RoHS compliant and Halogen-free device. Applications include renewable energy, Electric Vehicle (EV) battery chargers, high voltage DC/DC converters, and switch-mode power supplies.