C3M0030090K, Silicon Carbide MOSFET, Single, N Channel, 63 А, 900 В, 0.03 Ом, TO-247

Полупроводники - Дискретные\МОП-транзисторы\МОП-Транзисторы и Модули на Основе Карбида Кремния (SiC)The C3M0030090K is a silicon carbide power MOSFET using C3M MOSFET technology in 4 pin TO-247 package. It features 900V drain to source voltage and 63A continuous drain current at VGS = 15V, TC = 25˚C. Typical applications include solar inverters, EV battery chargers, High voltage DC/DC converters and switch mode power supplies.
• Optimized package with separate driver source pin• 8mm of creepage distance between drain and source• High blocking voltage with low on-resistance• High-speed switching with low capacitances• Fast intrinsic diode with low reverse recovery (Qrr)• Reduce switching losses and minimize gate ringing• Higher system efficiency Reduce cooling requirements• Increased power density and system switching frequency• Operating junction and storage temperature from -55 to +150˚C