Name: BSS87H6327FTSA1, Транзистор МОП n-канальный, полевой, 240В, 260мА, 1Вт, SOT89-4
SKU: BSS87H6327FTSA1

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.

Подробное описание

Вес и габариты
channel mode	Enhancement
channel type	N
maximum continuous drain current	260 mA

83 ₽

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Бонус: 1.66 !

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Итого: 83 ₽

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.

Вес и габариты
channel mode	Enhancement
channel type	N
maximum continuous drain current	260 mA
maximum drain source resistance	7.5 Ω
maximum drain source voltage	240 V
maximum gate source voltage	-20 V, +20 V
maximum gate threshold voltage	1.8V
maximum operating temperature	+150 C
maximum power dissipation	1 W
minimum gate threshold voltage	0.8V
minimum operating temperature	-55 C
mounting type	Surface Mount
number of elements per chip	1
package type	SOT-89
pin count	3
series	SIPMOS
transistor configuration	Single
transistor material	Si
typical gate charge @ vgs	3.7 nC 10 V
вес, г	0.09
width	2.5mm

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