130 ₽

– +

Бонус: 2.6 !

Бонусная программа

Итого: 130 ₽

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Вес и габариты
channel mode	Enhancement
configuration	Dual
factory pack quantity	3000
forward transconductance - min	0.08 S, 0.05 S
id - continuous drain current	115 mA, 130 mA
manufacturer	Diodes Incorporated
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
number of channels	2 Channel
package / case	SOT-363-6
packaging	Cut Tape or Reel
pd - power dissipation	200 mW
product	MOSFET Small Signal
product category	MOSFET
product type	MOSFET
rds on - drain-source resistance	7.5 Ohms, 10 Ohms
series	BSS84
subcategory	MOSFETs
technology	Si
transistor polarity	N-Channel, P-Channel
transistor type	1 N-Channel, 1 P-Channel
type	Enhancement Mode Field Effect Transistor
typical turn-off delay time	11 ns, 18 ns
typical turn-on delay time	7 ns, 10 ns
vds - drain-source breakdown voltage	60 V, 50 V
vgs - gate-source voltage	5 V
vgs th - gate-source threshold voltage	1 V, 800 mV

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Кнопки

BSS8402DW-7-F