BSS306NH6327XTSA1, Транзистор МОП n-канальный, полевой, 30В, 2,3А, 500мВт, SOT23

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Артикул: BSS306NH6327XTSA1
Small Signal Power MOSFETsInfineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection,...
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:9000
30
+
Бонус: 0.6 !
Бонусная программа
Итого: 30
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Small Signal Power MOSFETsInfineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101. Learn More
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:9000
fall time:1.4 ns
forward transconductance - min:5 S
id - continuous drain current:2.3 A
manufacturer:Infineon
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
number of channels:1 Channel
package/case:SOT-23-3
packaging:Reel, Cut Tape, MouseReel
part # aliases:BSS306N H6327 SP000928940
pd - power dissipation:500 mW
product category:MOSFET
product type:MOSFET
qg - gate charge:1.5 nC
qualification:AEC-Q101
rds on - drain-source resistance:57 mOhms
rise time:2.3 ns
series:BSS306
subcategory:MOSFETs
technology:Si
transistor polarity:N-Channel
transistor type:1 N-Channel
typical turn-off delay time:8.3 ns
typical turn-on delay time:4.4 ns
vds - drain-source breakdown voltage:30 V
вес, г0.5
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1.6 V
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