Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 20V 1,5A (Ta) 500 мВт (Ta) поверхностный монтаж PG-SOT323-3

Подробное описание

Вес и габариты
base product number	BSS214 ->
current - continuous drain (id) @ 25в°c	1.5A (Ta)
drain to source voltage (vdss)	20V

9 ₽

– +

Бонус: 0.18 !

Бонусная программа

Итого: 9 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 20V 1,5A (Ta) 500 мВт (Ta) поверхностный монтаж PG-SOT323-3

Вес и габариты
base product number	BSS214 ->
current - continuous drain (id) @ 25в°c	1.5A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	0.8nC @ 5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	143pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SC-70, SOT-323
power dissipation (max)	500mW (Ta)
rds on (max) @ id, vgs	140mOhm @ 1.5A, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	OptiMOSв„ў ->
supplier device package	PG-SOT323-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±12V
vgs(th) (max) @ id	1.2V @ 3.7ВµA

Отзывов нет

Кнопки

BSS214NWH6327XTSA1, Trans MOSFET N-CH 20V 1.5A Automotive 3-Pin SOT-323 T/R