Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 20V 2,5A (Ta) 500 мВт (Ta) поверхностный монтаж SOT-23-3

Подробное описание

Вес и габариты
base product number	BSS205 ->
current - continuous drain (id) @ 25в°c	2.5A (Ta)
drain to source voltage (vdss)	20V

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 20V 2,5A (Ta) 500 мВт (Ta) поверхностный монтаж SOT-23-3

Вес и габариты
base product number	BSS205 ->
current - continuous drain (id) @ 25в°c	2.5A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	3.2nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	419pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	500mW (Ta)
rds on (max) @ id, vgs	50mOhm @ 2.5A, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	OptiMOSв„ў ->
supplier device package	SOT-23-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±12V
vgs(th) (max) @ id	1.2V @ 11ВµA

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Кнопки

BSS205NH6327XTSA1, Trans MOSFET N-CH 20V 2.5A Automotive 3-Pin SOT-23 T/R