BSS123W-7-F, Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R

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Артикул: BSS123W-7-F
Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100 В 170 мА (Ta) 200 мВт (Ta) поверхностный монтаж SOT-323
Вес и габариты
automotiveNo
base product numberBSS123 ->
channel modeEnhancement
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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100 В 170 мА (Ta) 200 мВт (Ta) поверхностный монтаж SOT-323
Вес и габариты
automotiveNo
base product numberBSS123 ->
channel modeEnhancement
channel typeN
configurationSingle
continuous drain current (id) @ 25в°c170mA
current - continuous drain (id) @ 25в°c170mA (Ta)
drain to source voltage (vdss)100V
drive voltage (max rds on, min rds on)4.5V, 10V
eccnEAR99
eccn (us)EAR99
eu rohsCompliant
fet typeN-Channel
hts8541.29.00.95
htsus8541.21.0095
input capacitance (ciss) (max) @ vds60pF @ 25V
lead shapeGull-wing
maximum continuous drain current (a)0.17
maximum drain source resistance (mohm)6000@10V
maximum drain source voltage (v)100
maximum gate source voltage (v)±20
maximum operating temperature (°c)150
maximum power dissipation (mw)200
militaryNo
minimum operating temperature (°c)-55
moisture sensitivity level (msl)1 (Unlimited)
mountingSurface Mount
mounting typeSurface Mount
number of elements per chip1
operating temperature-55В°C ~ 150В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / caseSC-70, SOT-323
package height0.95
package length2.15
package width1.3
packagingTape and Reel
part statusActive
pcb changed3
pin count3
power dissipation (max)200mW (Ta)
power dissipation-max (ta=25в°c)200mW
product categorySmall Signal
rds on - drain-source resistance6О© @ 170mA,10V
rds on (max) @ id, vgs6Ohm @ 170mA, 10V
reach statusREACH Unaffected
rohs statusROHS3 Compliant
standard package nameSOT
supplier device packageSOT-323
supplier packageSOT-323
supplier temperature gradeAutomotive
technologyMOSFET (Metal Oxide)
transistor polarityN Channel
typical fall time (ns)16(Max)
typical input capacitance @ vds (pf)29@25V
typical rise time (ns)8(Max)
typical turn-off delay time (ns)13(Max)
typical turn-on delay time (ns)8(Max)
vds - drain-source breakdown voltage100V
vgs - gate-source voltage2V @ 1mA
vgs (max)В±20V
vgs(th) (max) @ id2V @ 1mA
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