Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

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280 ₽

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Бонус: 5.6 !

Бонусная программа

Итого: 280 ₽

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Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single Quad Drain Triple Source
eccn (us)	EAR99
eu rohs	Compliant with Exemption
lead shape	No Lead
maximum continuous drain current (a)	12
maximum drain source resistance (mohm)	9.7 10V
maximum drain source voltage (v)	60
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	3.3
maximum idss (ua)	1
maximum operating temperature (°c)	150
maximum power dissipation (mw)	2500
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
operating junction temperature (°c)	-55 to 150
packaging	Tape and Reel
part status	Active
pcb changed	8
pin count	8
ppap	No
process technology	OptiMOS
product category	Power MOSFET
standard package name	SON
supplier package	TDSON EP
typical fall time (ns)	2
typical gate charge @ 10v (nc)	12
typical gate charge @ vgs (nc)	12 10V
typical input capacitance @ vds (pf)	860 30V
typical rise time (ns)	2
typical turn-off delay time (ns)	10
typical turn-on delay time (ns)	6

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Кнопки

BSC097N06NSATMA1