BSC042NE7NS3GATMA1
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The BSC042NE7NS3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
• Best switching performance• World's lowest RDS (ON)• Very low Qg and Qgd• Excellent gate charge x RDS (ON) product (FOM)• MSL1 rated• Environmentally friendly• Increased efficiency• Highest power density• Less paralleling required• Smallest board-space consumption• Easy-to-design products• Ideal for high frequency switching and DC-to-DC converters• Normal level• Superior thermal resistance• 100% avalanche tested• Qualified according to JEDEC for target applications• Green device
• Best switching performance• World's lowest RDS (ON)• Very low Qg and Qgd• Excellent gate charge x RDS (ON) product (FOM)• MSL1 rated• Environmentally friendly• Increased efficiency• Highest power density• Less paralleling required• Smallest board-space consumption• Easy-to-design products• Ideal for high frequency switching and DC-to-DC converters• Normal level• Superior thermal resistance• 100% avalanche tested• Qualified according to JEDEC for target applications• Green device
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