Вес и габариты | |
automotive | No |
channel mode | Enhancement |
channel mode: | Enhancement |
channel type | N |
configuration | Single Quad Drain Triple Source |
configuration: | Single |
continuous drain current (id) @ 25в°c | 38A |
eccn (us) | EAR99 |
eu rohs | Compliant with Exemption |
factory pack quantity: factory pack quantity: | 5000 |
fall time: | 9 ns |
forward transconductance - min: | 140 S |
id - continuous drain current: | 100 A |
lead shape | No Lead |
manufacturer: | Infineon |
maximum continuous drain current (a) | 38 |
maximum drain source resistance (mohm) | 1 10V |
maximum drain source voltage (v) | 40 |
maximum gate source leakage current (na) | 100 |
maximum gate source voltage (v) | ±20 |
maximum gate threshold voltage (v) | 2 |
maximum idss (ua) | 1 |
maximum operating temperature: | +150 C |
maximum operating temperature (°c) | 150 |
maximum power dissipation (mw) | 2500 |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Surface Mount |
mounting style: | SMD/SMT |
number of channels: | 1 Channel |
number of elements per chip | 1 |
operating junction temperature (°c) | -55 to 150 |
package/case: | TDSON-8 |
packaging | Tape and Reel |
packaging: | Reel, Cut Tape, MouseReel |
part # aliases: | BSC010N04LS SP000928282 |
part status | Active |
pcb changed | 8 |
pd - power dissipation: | 139 W |
pin count | 8 |
power dissipation-max (ta=25в°c) | 2.5W |
ppap | No |
process technology | OptiMOS |
product category | Power MOSFET |
product category: | MOSFET |
product type: | MOSFET |
qg - gate charge: | 133 nC |
rds on - drain-source resistance | 1mО© @ 50A,10V |
rds on - drain-source resistance: | 1 mOhms |
rise time: | 12 ns |
series: | OptiMOS 5 |
standard package name | SON |
subcategory: | MOSFETs |
supplier package | TDSON EP |
technology: | Si |
tradename: | OptiMOS |
transistor polarity | N Channel |
transistor polarity: | N-Channel |
transistor type: | 1 N-Channel |
typical fall time (ns) | 9 |
typical gate charge @ 10v (nc) | 95 |
typical gate charge @ vgs (nc) | 95 10V|49 4.5V |
typical input capacitance @ vds (pf) | 6800 20V |
typical rise time (ns) | 12 |
typical turn-off delay time: | 46 ns |
typical turn-off delay time (ns) | 46 |
typical turn-on delay time: | 10 ns |
typical turn-on delay time (ns) | 10 |
vds - drain-source breakdown voltage | 40V |
vds - drain-source breakdown voltage: | 40 V |
vgs - gate-source voltage | 2V @ 250uA |
vgs - gate-source voltage: | -20 V, +20 V |
vgs th - gate-source threshold voltage: | 1.2 V |