| Вес и габариты | |
| automotive | No |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| channel type | N |
| configuration | Single Quad Drain Triple Source |
| configuration: | Single |
| continuous drain current (id) @ 25в°c | 38A |
| eccn (us) | ear99 |
| eu rohs | Compliant with Exemption |
| factory pack quantity: factory pack quantity: | 5000 |
| fall time: | 9 ns |
| forward transconductance - min: | 140 S |
| id - continuous drain current: | 100 A |
| lead shape | no lead |
| manufacturer: | Infineon |
| maximum continuous drain current (a) | 38 |
| maximum drain source resistance (mohm) | 1 10V |
| maximum drain source voltage (v) | 40 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 2 |
| maximum idss (ua) | 1 |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 2500 |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | surface mount |
| mounting style: | SMD/SMT |
| number of channels: | 1 Channel |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 150 |
| package/case: | TDSON-8 |
| packaging | Tape and Reel |
| packaging: | Reel, Cut Tape, MouseReel |
| part # aliases: | BSC010N04LS SP000928282 |
| part status | active |
| pcb changed | 8 |
| pd - power dissipation: | 139 W |
| pin count | 8 |
| power dissipation-max (ta=25в°c) | 2.5W |
| ppap | No |
| process technology | OptiMOS |
| product category | Power MOSFET |
| product category: | MOSFET |
| product type: | MOSFET |
| qg - gate charge: | 133 nC |
| rds on - drain-source resistance | 1mО© @ 50A,10V |
| rds on - drain-source resistance: | 1 mOhms |
| rise time: | 12 ns |
| series: | OptiMOS 5 |
| standard package name | SON |
| subcategory: | MOSFETs |
| supplier package | TDSON EP |
| technology: | Si |
| tradename: | OptiMOS |
| transistor polarity | N Channel |
| transistor polarity: | N-Channel |
| transistor type: | 1 N-Channel |
| typical fall time (ns) | 9 |
| typical gate charge @ 10v (nc) | 95 |
| typical gate charge @ vgs (nc) | 95 10V|49 4.5V |
| typical input capacitance @ vds (pf) | 6800 20V |
| typical rise time (ns) | 12 |
| typical turn-off delay time: | 46 ns |
| typical turn-off delay time (ns) | 46 |
| typical turn-on delay time: | 10 ns |
| typical turn-on delay time (ns) | 10 |
| vds - drain-source breakdown voltage | 40V |
| vds - drain-source breakdown voltage: | 40 V |
| vgs - gate-source voltage | 2V @ 250uA |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage: | 1.2 V |
