Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 1000 В, 8 А (Tc) 290 Вт (Tc), сквозное отверстие TO-247 [B]

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 1000 В, 8 А (Tc) 290 Вт (Tc), сквозное отверстие TO-247 [B]

Вес и габариты
base product number	APT8M100 ->
channel mode:	Enhancement
configuration:	Single
current - continuous drain (id) @ 25в°c	8A (Tc)
drain to source voltage (vdss)	1000V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
factory pack quantity: factory pack quantity:	1
fall time:	7.2 ns
fet type	N-Channel
forward transconductance - min:	7.5 S
gate charge (qg) (max) @ vgs	60nC @ 10V
htsus	8541.29.0095
id - continuous drain current:	8 A
input capacitance (ciss) (max) @ vds	1885pF @ 25V
manufacturer:	Microchip
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style:	Through Hole
mounting type	Through Hole
number of channels:	1 Channel
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
package/case:	TO-247-3
packaging:	Tube
pd - power dissipation:	290 W
power dissipation (max)	290W (Tc)
product category:	MOSFET
product type:	MOSFET
qg - gate charge:	60 nC
rds on - drain-source resistance:	1.53 Ohms
rds on (max) @ id, vgs	1.8Ohm @ 4A, 10V
reach status	REACH Unaffected
rise time:	7.8 ns
rohs status	RoHS Compliant
subcategory:	MOSFETs
supplier device package	TO-247 [B]
technology	MOSFET (Metal Oxide)
technology:	Si
tradename:	Power MOS 8
transistor polarity:	N-Channel
typical turn-off delay time:	29 ns
typical turn-on delay time:	8.5 ns
vds - drain-source breakdown voltage:	1 kV
вес, г	6
vgs - gate-source voltage:	-30 V, +30 V
vgs (max)	В±30V
vgs th - gate-source threshold voltage:	4 V
vgs(th) (max) @ id	5V @ 1mA

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Кнопки

APT8M100B, MOSFET FG, MOSFET, 1000V, TO-247