Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 1200V 24A (Tc) 1040W (Tc) Through Hole T-MAXв„ў [B2]

Подробное описание

Вес и габариты
base product number	APT24M120 ->
current - continuous drain (id) @ 25в°c	24A (Tc)
drain to source voltage (vdss)	1200V

3 010 ₽

– +

Бонус: 60.2 !

Бонусная программа

Итого: 3 010 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 1200V 24A (Tc) 1040W (Tc) Through Hole T-MAXв„ў [B2]

Вес и габариты
base product number	APT24M120 ->
current - continuous drain (id) @ 25в°c	24A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	260nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	8370pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3 Variant
power dissipation (max)	1040W (Tc)
rds on (max) @ id, vgs	630mOhm @ 12A, 10V
reach status	REACH Unaffected
rohs status	RoHS Compliant
series	POWER MOS 8в„ў ->
supplier device package	T-MAXв„ў [B2]
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 2.5mA

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Кнопки

APT24M120B2