Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1000V 18A (Tc) 625W (Tc) поверхностный монтаж D3PAK

Подробное описание

Вес и габариты
base product number	APT18M100 ->
current - continuous drain (id) @ 25в°c	18A (Tc)
drain to source voltage (vdss)	1000V

2 310 ₽

– +

Бонус: 46.2 !

Бонусная программа

Итого: 2 310 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1000V 18A (Tc) 625W (Tc) поверхностный монтаж D3PAK

Вес и габариты
base product number	APT18M100 ->
current - continuous drain (id) @ 25в°c	18A (Tc)
drain to source voltage (vdss)	1000V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	150nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	4845pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-268-3, DВіPak (2 Leads + Tab), TO-268AA
power dissipation (max)	625W (Tc)
rds on (max) @ id, vgs	700mOhm @ 9A, 10V
series	POWER MOS 8в„ў ->
supplier device package	D3PAK
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 1mA

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APT18M100S