Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200V 12A (Tc) 400W (Tc) сквозное отверстие TO-247

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	12A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	10V

5 870 ₽

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Бонус: 117.4 !

Бонусная программа

Итого: 5 870 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200V 12A (Tc) 400W (Tc) сквозное отверстие TO-247

Вес и габариты
current - continuous drain (id) @ 25в°c	12A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	150nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	3100pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	400W (Tc)
rds on (max) @ id, vgs	1.2Ohm @ 6A, 10V
series	POWER MOS 7В® ->
supplier device package	TO-247
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 1mA

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APT1201R2BLLG