Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 100V 100A (Tc) 520W (Tc) сквозное отверстие TO-264 (L)

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	100A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V

8 690 ₽

– +

Бонус: 173.8 !

Бонусная программа

Итого: 8 690 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 100V 100A (Tc) 520W (Tc) сквозное отверстие TO-264 (L)

Вес и габариты
current - continuous drain (id) @ 25в°c	100A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	450nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	10300pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-264-3, TO-264AA
power dissipation (max)	520W (Tc)
rds on (max) @ id, vgs	11mOhm @ 50A, 10V
series	POWER MOS VВ® ->
supplier device package	TO-264 (L)
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	4V @ 2.5mA

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APT10M11LVRG