Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 28A (Tc) 312,5W (Tc) сквозное отверстие TO-262

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	28A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V

1 050 ₽

– +

Бонус: 21 !

Бонусная программа

Итого: 1 050 ₽

Купить

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 28A (Tc) 312,5W (Tc) сквозное отверстие TO-262

Вес и габариты
current - continuous drain (id) @ 25в°c	28A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	39nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2993pF @ 100V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-262-3 Long Leads, IВІPak, TO-262AA
power dissipation (max)	312.5W (Tc)
rds on (max) @ id, vgs	125mOhm @ 14A, 10V
rohs status	ROHS3 Compliant
series	aMOS5в„ў ->
supplier device package	TO-262
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4.5V @ 250ВµA

Отзывов нет

Кнопки

AOW125A60