Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 11A (Tc) 272W (Tc) сквозное отверстие TO-262

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	11A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V

390 ₽

– +

Бонус: 7.8 !

Бонусная программа

Итого: 390 ₽

Купить

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 11A (Tc) 272W (Tc) сквозное отверстие TO-262

Вес и габариты
current - continuous drain (id) @ 25в°c	11A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	37nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1990pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
other related documents	http://aosmd.com/media/AOSGreenPolicy.pdf
package	Tube
package / case	TO-262-3 Long Leads, IВІPak, TO-262AA
power dissipation (max)	272W (Tc)
rds on (max) @ id, vgs	700mOhm @ 5.5A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-262
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	4.5V @ 250ВµA

Отзывов нет

Кнопки

AOW11N60