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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 700V 12A (Tj) 29,5W (Tc) сквозное отверстие TO-220F

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Вес и габариты
current - continuous drain (id) @ 25в°c	12A (Tj)
drain to source voltage (vdss)	700V
drive voltage (max rds on, min rds on)	10V

480 ₽

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Итого: 480 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 700V 12A (Tj) 29,5W (Tc) сквозное отверстие TO-220F

Вес и габариты
current - continuous drain (id) @ 25в°c	12A (Tj)
drain to source voltage (vdss)	700V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	22.5nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1360pF @ 100V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack
power dissipation (max)	29.5W (Tc)
rds on (max) @ id, vgs	360mOhm @ 6A, 10V
rohs status	ROHS3 Compliant
series	aMOS5в„ў ->
supplier device package	TO-220F
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 250ВµA

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