Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 600 В, 24 А (Tj), 34,7 Вт (Tc), сквозное отверстие, TO-220F

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	24A (Tj)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V

780 ₽

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Бонус: 15.6 !

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Итого: 780 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал, 600 В, 24 А (Tj), 34,7 Вт (Tc), сквозное отверстие, TO-220F

Вес и габариты
current - continuous drain (id) @ 25в°c	24A (Tj)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	46nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2340pF @ 100V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack
power dissipation (max)	34.7W (Tc)
rds on (max) @ id, vgs	160mOhm @ 12A, 10V
rohs status	ROHS3 Compliant
series	aMOS5в„ў ->
supplier device package	TO-220F
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	3.6V @ 250ВµA

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