Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600 В, 1,3 A (Tc) 41,7 Вт (Tc), сквозное отверстие TO-220

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	1.3A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600 В, 1,3 A (Tc) 41,7 Вт (Tc), сквозное отверстие TO-220

Вес и габариты
current - continuous drain (id) @ 25в°c	1.3A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	8nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	160pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
other related documents	http://aosmd.com/media/AOSGreenPolicy.pdf
package	Tube
package / case	TO-220-3
power dissipation (max)	41.7W (Tc)
rds on (max) @ id, vgs	9Ohm @ 650mA, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-220
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	4.5V @ 250ВµA

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