Name: AOSP36326C, Транзистор: N-MOSFET; полевой; 30В; 12А; 2,5Вт; SO8
SKU: AOSP36326C

N-канал 30V 12A (Ta) 2,5W (Ta) поверхностный монтаж 8-SOIC

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	12A (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	4.5V, 10V

44 ₽

– +

Бонус: 0.88 !

Бонусная программа

Итого: 44 ₽

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N-канал 30V 12A (Ta) 2,5W (Ta) поверхностный монтаж 8-SOIC

Вес и габариты
current - continuous drain (id) @ 25в°c	12A (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	15nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	542pF @ 15V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	8-SOIC (0.154"", 3.90mm Width)
power dissipation (max)	2.5W (Ta)
rds on (max) @ id, vgs	11mOhm @ 12A, 10V
rohs status	ROHS3 Compliant
supplier device package	8-SOIC
technology	MOSFET (Metal Oxide)
вес, г	0.1
vgs (max)	В±20V
vgs(th) (max) @ id	2.3V @ 250ВµA

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