Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 700V 5A (Tc) 56,5W (Tc) сквозное отверстие TO-251A

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	5A (Tc)
drain to source voltage (vdss)	700V
drive voltage (max rds on, min rds on)	10V

330 ₽

– +

Бонус: 6.6 !

Бонусная программа

Итого: 330 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 700V 5A (Tc) 56,5W (Tc) сквозное отверстие TO-251A

Вес и габариты
current - continuous drain (id) @ 25в°c	5A (Tc)
drain to source voltage (vdss)	700V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	10nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	461pF @ 100V
manufacturer	AOS
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-251-3 Stub Leads, IPak
power dissipation (max)	56.5W (Tc)
rds on (max) @ id, vgs	950mOhm @ 1A, 10V
rohs status	ROHS3 Compliant
series	aMOS5в„ў ->
supplier device package	TO-251A
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4.1V @ 250ВµA

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Кнопки

AOI950A70