Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 100V 4A (Ta), 14A (Tc) 2,5W (Ta), 30W (Tc) сквозное отверстие TO-251A

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	4A (Ta), 14A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	4.5V, 10V

150 ₽

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Итого: 150 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 100V 4A (Ta), 14A (Tc) 2,5W (Ta), 30W (Tc) сквозное отверстие TO-251A

Вес и габариты
current - continuous drain (id) @ 25в°c	4A (Ta), 14A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	10nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	390pF @ 50V
manufacturer	AOS
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
other related documents	http://aosmd.com/media/AOSGreenPolicy.pdf
package	Tube
package / case	TO-251-3 Stub Leads, IPak
power dissipation (max)	2.5W (Ta), 30W (Tc)
rds on (max) @ id, vgs	68mOhm @ 5A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-251A
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	2.9V @ 250ВµA

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Кнопки

AOI4286