N-канал 30 В 100 мА (Ta) 200 мВт (Ta) Поверхностный монтаж UMT3

Подробное описание

130 ₽

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Бонус: 2.6 !

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Итого: 130 ₽

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N-канал 30 В 100 мА (Ta) 200 мВт (Ta) Поверхностный монтаж UMT3

Вес и габариты
base product number	2SK3018 ->
channel mode	Enhancement
configuration	Single
current - continuous drain (id) @ 25в°c	100mA (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	2.5V, 4V
eccn	EAR99
factory pack quantity	3000
fall time	80 ns
fet type	N-Channel
forward transconductance - min	20 mS
htsus	8541.21.0095
id - continuous drain current	100 mA
input capacitance (ciss) (max) @ vds	13pF @ 5V
manufacturer	ROHM Semiconductor
maximum operating temperature	+150 C
minimum operating temperature	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	1 Channel
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SC-70, SOT-323
packaging	Cut Tape or Reel
part # aliases	2SK3018
pd - power dissipation	200 mW
power dissipation (max)	200mW (Ta)
product	MOSFET Small Signal
product category	MOSFET
product type	MOSFET
rds on - drain-source resistance	8 Ohms
rds on (max) @ id, vgs	8Ohm @ 10mA, 4V
reach status	REACH Unaffected
rise time	35 ns
rohs status	ROHS3 Compliant
series	2SK3018
subcategory	MOSFETs
supplier device package	UMT3
technology	MOSFET (Metal Oxide)
transistor polarity	N-Channel
transistor type	1 N-Channel
type	MOSFET
typical turn-off delay time	80 ns
typical turn-on delay time	15 ns
vds - drain-source breakdown voltage	30 V
vgs - gate-source voltage	4 V
vgs (max)	В±20V
vgs th - gate-source threshold voltage	800 mV
vgs(th) (max) @ id	1.5V @ 100ВµA

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Кнопки

2SK3018T106