2N7002E-T1-E3, N CHANNEL MOSFET, 60V, 240mA TO-236
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Артикул: 2N7002E-T1-E3
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| Основные | |
| вес, г | 0.06 |
| package / case | SOT-23-3 |
| minimum operating temperature | -55 C |
| pin count | 3 |
| factory pack quantity | 3000 |
| manufacturer | Vishay |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Tape and Reel |
| product category | Power MOSFET |
| product type | MOSFET |
| series | 2N7002E |
| subcategory | MOSFETs |
| automotive | No |
| eu rohs | Compliant |
| lead shape | Gull-wing |
| maximum operating temperature (°c) | 150 |
| mounting | Surface Mount |
| part status | NRND |
| pcb changed | 3 |
| standard package name | SOT |
| supplier package | SOT-23 |
| eccn (us) | EAR99 |
| maximum power dissipation (mw) | 350 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| factory pack quantity: factory pack quantity: | 3000 |
| manufacturer: | Vishay |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | SMD/SMT |
| product category: | MOSFET |
| product type: | MOSFET |
| series: | 2N7002E |
| subcategory: | MOSFETs |
| packaging: | Reel, Cut Tape, MouseReel |
| part # aliases: | 2N7002E-E3 |
| number of channels | 1 Channel |
| hts | 8541.29.00.95 |
| package height | 1.02(Max) |
| package length | 3.04(Max) |
| package width | 1.4(Max) |
| Вес и габариты | |
| package/case: | SOT-23-3 |
| number of elements per chip | 1 |
| channel type | N |
| pd - power dissipation: | 350 mW |
| part # aliases | 2N7002E-E3 |
| technology | Si |
| number of channels: | 1 Channel |
| pd - power dissipation | 350 mW |
| technology: | Si |
| configuration: | Single |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 0.24 |
| maximum drain source resistance (mohm) | 3000@10V |
| maximum drain source voltage (v) | 60 |
| maximum gate source voltage (v) | ±20 |
| typical gate charge @ vgs (nc) | 0.4@4.5V |
| typical input capacitance @ vds (pf) | 21@5V |
| military | No |
| rds on - drain-source resistance | 3 Ohms |
| transistor polarity | N-Channel |
| vds - drain-source breakdown voltage | 60 V |
| vgs - gate-source voltage | 4.5 V |
| id - continuous drain current | 240 mA |
| typical turn-on delay time | 13 ns |
| typical turn-off delay time | 18 ns |
| forward transconductance - min | 600 mS |
| qg - gate charge | 0.6 nC |
| transistor type | 1 N-Channel |
| vgs th - gate-source threshold voltage | 1 V |
| channel mode: | Enhancement |
| id - continuous drain current: | 240 mA |
| qg - gate charge: | 600 pC |
| rds on - drain-source resistance: | 3 Ohms |
| transistor polarity: | N-Channel |
| transistor type: | 1 N-Channel |
| vds - drain-source breakdown voltage: | 60 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage: | 1 V |
| typical turn-off delay time: | 18 ns |
| typical turn-on delay time: | 13 ns |
| forward transconductance - min: | 600 mS |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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