2N7002DW-TP

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Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Вес и габариты
channel modeEnhancement
channel mode:Enhancement
configurationDual
16
+
Бонус: 0.32 !
Бонусная программа
Итого: 16
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Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Вес и габариты
channel modeEnhancement
channel mode:Enhancement
configurationDual
configuration:Dual
factory pack quantity3000
factory pack quantity: factory pack quantity:3000
forward transconductance - min80 mS
forward transconductance - min:80 ms
id - continuous drain current115 mA
id - continuous drain current:300 mA
manufacturerMicro Commercial Components(MCC)
manufacturer:Micro Commercial Components(MCC)
maximum operating temperature+150 C
maximum operating temperature:+150 C
minimum operating temperature-55 C
minimum operating temperature:-55 C
mounting styleSMD/SMT
mounting style:SMD/SMT
number of channels2 Channel
number of channels:2 Channel
package / caseSOT-363-6
package/case:SOT-363-6
packagingCut Tape or Reel
packaging:Reel, Cut Tape, MouseReel
pd - power dissipation200 mW
pd - power dissipation:150 mW
productMOSFET Small Signal
product:MOSFET Small Signal
product categoryMOSFET
product category:MOSFET
product typeMOSFET
product type:MOSFET
rds on - drain-source resistance13.5 Ohms
rds on - drain-source resistance:13.5 Ohms
seriesNиN Ch Polarity
series:NиN Ch Polarity
subcategoryMOSFETs
subcategory:MOSFETs
technologySi
technology:Si
transistor polarityN-Channel
transistor polarity:N-Channel
transistor type2 N-Channel
transistor type:2 N-Channel
typical turn-off delay time11 ns
typical turn-off delay time:11 ns
typical turn-on delay time7 ns
typical turn-on delay time:7 ns
vds - drain-source breakdown voltage60 V
vds - drain-source breakdown voltage:60 V
вес, г0.01
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1 V
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