Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторовкорпус: SOT-363, инфо: Сборка из полевых транзисторов, 2N-канальный, 60 В, 230 мА

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10 ₽

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Вес и габариты
channel mode	Enhancement
configuration	Dual
factory pack quantity	3000
forward transconductance - min	80 mS
id - continuous drain current	230 mA
manufacturer	Diodes Incorporated
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
number of channels	2 Channel
package / case	SOT-363-6
packaging	Cut Tape or Reel
pd - power dissipation	0.4 W
product	MOSFET Small Signal
product category	MOSFET
product type	MOSFET
rds on - drain-source resistance	7.5 Ohms
series	2N7002DW
subcategory	MOSFETs
technology	Si
transistor polarity	N-Channel
transistor type	2 N-Channel
type	Enhancement Mode Field Effect Transistor
typical turn-off delay time	11 ns
typical turn-on delay time	7 ns
vds - drain-source breakdown voltage	70 V
вес, г	0.04
vgs - gate-source voltage	5 V
vgs th - gate-source threshold voltage	1 V

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Кнопки

2N7002DW-7-F