Name: 2N6661, Силовой МОП-транзистор, вертикальный DMOS FET, N Канал, 90 В, 1.5 А, 4 Ом, TO-39, Through Ho
SKU: 2N6661

N-канал 90 В 350 мА (Tj) 6,25 Вт (Tc) сквозное отверстие TO-39

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	350mA (Tj)
drain to source voltage (vdss)	90V
drive voltage (max rds on, min rds on)	5V, 10V

2 980 ₽

– +

Бонус: 59.6 !

Бонусная программа

Итого: 2 980 ₽

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N-канал 90 В 350 мА (Tj) 6,25 Вт (Tc) сквозное отверстие TO-39

Вес и габариты
current - continuous drain (id) @ 25в°c	350mA (Tj)
drain to source voltage (vdss)	90V
drive voltage (max rds on, min rds on)	5V, 10V
eccn	EAR99
fet type	N-Channel
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	50pF @ 24V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Bulk
package / case	TO-205AD, TO-39-3 Metal Can
pcn assembly/origin	http://www.microchip.com/mymicrochip/NotificationD
pcn design/specification	http://www.microchip.com/mymicrochip/NotificationD
pcn packaging	http://www.microchip.com/mymicrochip/NotificationD
power dissipation (max)	6.25W (Tc)
rds on (max) @ id, vgs	4Ohm @ 1A, 10V
reach status	REACH Unaffected
rohs status	RoHS non-compliant
supplier device package	TO-39
technology	MOSFET (Metal Oxide)
вес, г	0.57
vgs (max)	В±20V
vgs(th) (max) @ id	2V @ 1mA

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