| Дата загрузки | 23.02.2024 |
| Вес и габариты | |
| вес, г | 0.03 |
| Информация о производителе | |
| Производитель | DIODES INC. |
| Бренд | DIODES INC. |
| Основные | |
| collector- base voltage vcbo: | 130 V |
| collector-emitter saturation voltage: | 140 mV |
| collector- emitter voltage vceo max: | 40 V |
| configuration: | Single |
| continuous collector current: | 4 A |
| dc collector/base gain hfe min: | 300 |
| dc current gain hfe max: | 300 at 10 mA, 2 V |
| emitter- base voltage vebo: | 7 V |
| factory pack quantity: factory pack quantity: | 3000 |
| gain bandwidth product ft: | 190 MHz |
| категория | Электронные компоненты/Транзисторы |
| manufacturer: | Diodes Incorporated |
| maximum dc collector current: | 4 A |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | SMD/SMT |
| package / case: | SOT-23-3 |
| партномер | 8017602372 |
| pd - power dissipation: | 1.25 W |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| series: | ZXTN25040 |
| subcategory: | Transistors |
| technology: | Si |
| transistor polarity: | NPN |
| Время загрузки | 0:00:15 |