Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Подробное описание

Вес и габариты
collector- base voltage vcbo	200 V
collector-emitter saturation voltage	60 mV
collector- emitter voltage vceo max	100 V

60 ₽

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Итого: 60 ₽

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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Вес и габариты
collector- base voltage vcbo	200 V
collector-emitter saturation voltage	60 mV
collector- emitter voltage vceo max	100 V
configuration	Single
continuous collector current	4.5 A
dc collector/base gain hfe min	200
dc current gain hfe max	500
emitter- base voltage vebo	7 V
factory pack quantity	3000
gain bandwidth product ft	150 MHz
manufacturer	Diodes Incorporated
maximum dc collector current	4.5 A
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	SOT-23F-3
packaging	Cut Tape or Reel
pd - power dissipation	16 W
product category	Bipolar Transistors-BJT
product type	BJTs-Bipolar Transistors
series	ZXTN19100
subcategory	Transistors
transistor polarity	NPN
вес, г	0.05

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ZXTN19100CFFTA