Вес и габариты | |
collector- base voltage vcbo | 200 V |
collector-emitter saturation voltage | 60 mV |
collector- emitter voltage vceo max | 100 V |
configuration | Single |
continuous collector current | 4.5 A |
dc collector/base gain hfe min | 200 |
dc current gain hfe max | 500 |
emitter- base voltage vebo | 7 V |
factory pack quantity | 3000 |
gain bandwidth product ft | 150 MHz |
manufacturer | Diodes Incorporated |
maximum dc collector current | 4.5 A |
maximum operating temperature | +150 C |
minimum operating temperature | -55 C |
mounting style | SMD/SMT |
package / case | SOT-23F-3 |
packaging | Cut Tape or Reel |
pd - power dissipation | 16 W |
product category | Bipolar Transistors-BJT |
product type | BJTs-Bipolar Transistors |
series | ZXTN19100 |
subcategory | Transistors |
transistor polarity | NPN |
вес, г | 0.008 |