| Вес и габариты | |
| collector- base voltage vcbo | 200 V |
| collector-emitter saturation voltage | 60 mV |
| collector- emitter voltage vceo max | 100 V |
| configuration | Single |
| continuous collector current | 4.5 A |
| dc collector/base gain hfe min | 200 |
| dc current gain hfe max | 500 |
| emitter- base voltage vebo | 7 V |
| factory pack quantity | 3000 |
| gain bandwidth product ft | 150 MHz |
| manufacturer | DIODES INCORPORATED |
| maximum dc collector current | 4.5 A |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | SMD/SMT |
| package / case | SOT-23F-3 |
| packaging | Cut Tape or Reel |
| pd - power dissipation | 16 W |
| product category | Bipolar Transistors-BJT |
| product type | BJTs-Bipolar Transistors |
| series | ZXTN19100 |
| subcategory | Transistors |
| transistor polarity | NPN |
| вес, г | 0.008 |