Дата загрузки | 23.02.2024 |
Вес и габариты | |
вес, г | 0.242 |
Информация о производителе | |
Производитель | DIODES INC. |
Бренд | DIODES INC. |
Основные | |
automotive | No |
collector- base voltage vcbo | -100 V |
collector- base voltage vcbo: | 100 V |
collector-emitter saturation voltage: | 220 mV |
collector- emitter voltage vceo max | 60 V |
collector- emitter voltage vceo max: | 60 V |
configuration | Single |
configuration: | Single |
continuous collector current | -4 A |
continuous collector current: | -4 A |
eccn (us) | EAR99 |
emitter- base voltage vebo | -6 V |
emitter- base voltage vebo: | 6 V |
eu rohs | Compliant with Exemption |
factory pack quantity | 4000 |
factory pack quantity: factory pack quantity: | 4000 |
gain bandwidth product ft | 120 MHz |
gain bandwidth product ft: | 120 MHz |
height | 4.01 mm |
категория | Электронные компоненты/Транзисторы |
lead shape | Through Hole |
length | 4.77 mm |
manufacturer | Diodes Incorporated |
manufacturer: | Diodes Incorporated |
material | Si |
maximum base emitter saturation voltage (v) | 1.1@400mA@4A |
maximum collector base voltage | 100 V |
maximum collector base voltage (v) | 100 |
maximum collector cut-off current (na) | 50 |
maximum collector emitter voltage | -60 V |
maximum collector-emitter voltage (v) | 60 |
maximum dc collector current | 4 A |
maximum dc collector current: | 4 A |
maximum dc collector current (a) | 4 |
maximum emitter base voltage | 6 V |
maximum emitter base voltage (v) | 6 |
maximum operating frequency | 120 MHz |
maximum operating temperature | +150 C |
maximum operating temperature: | +200 C |
maximum operating temperature (°c) | 200 |
maximum power dissipation | 1.2 W |
maximum power dissipation (mw) | 1200 |
maximum transition frequency (mhz) | 120(Typ) |
minimum dc current gain | 100@10mA@1V|100@1A@1V|75@4A@1V|10@10A@1V |
minimum operating temperature | -55 C |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Through Hole |
mounting style | Through Hole |
mounting style: | Through Hole |
mounting type | Through Hole |
number of elements per chip | 1 |
package / case | TO-92-3 |
package / case: | TO-92-3 |
package type | TO-92 |
packaging | Bulk |
packaging: | Bulk |
партномер | 8005444071 |
part status | Active |
pcb changed | 3 |
pd - power dissipation | 1.2 W |
pd - power dissipation: | 1.2 W |
pin count | 3 |
ppap | No |
product category | Bipolar Transistors-BJT |
product category: | Bipolar Transistors-BJT |
product type: | BJTs-Bipolar Transistors |
rohs | Details |
series | ZTX951 |
series: | ZTX951 |
standard package name | TO-92 |
subcategory: | Transistors |
supplier package | E-Line |
technology: | Si |
transistor configuration | Single |
transistor polarity | PNP |
transistor polarity: | PNP |
transistor type | PNP |
type | PNP |
unit weight | 0.015873 oz |
Время загрузки | 0:03:48 |
width | 2.41 mm |