| Дата загрузки | 23.02.2024 |
| Вес и габариты | |
| вес, г | 0.242 |
| Высота | 4.01 мм |
| Информация о производителе | |
| Производитель | DIODES INC. |
| Бренд | DIODES INC. |
| Основные | |
| automotive | No |
| collector- base voltage vcbo | -100 V |
| collector- base voltage vcbo: | 100 V |
| collector-emitter saturation voltage: | 220 mV |
| collector- emitter voltage vceo max | 60 V |
| collector- emitter voltage vceo max: | 60 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current | -4 A |
| continuous collector current: | -4 A |
| eccn (us) | ear99 |
| emitter- base voltage vebo | -6 V |
| emitter- base voltage vebo: | 6 V |
| eu rohs | Compliant with Exemption |
| factory pack quantity | 4000 |
| factory pack quantity: factory pack quantity: | 4000 |
| gain bandwidth product ft | 120 MHz |
| gain bandwidth product ft: | 120 MHz |
| height | 4.01 mm |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Through Hole |
| length | 4.77 mm |
| manufacturer | DIODES INCORPORATED |
| manufacturer: | Diodes Incorporated |
| material | Si |
| maximum base emitter saturation voltage (v) | 1.1@400mA@4A |
| maximum collector base voltage | 100 V |
| maximum collector base voltage (v) | 100 |
| maximum collector cut-off current (na) | 50 |
| maximum collector emitter voltage | -60 V |
| maximum collector-emitter voltage (v) | 60 |
| maximum dc collector current | 4 A |
| maximum dc collector current: | 4 A |
| maximum dc collector current (a) | 4 |
| maximum emitter base voltage | 6 V |
| maximum emitter base voltage (v) | 6 |
| maximum operating frequency | 120 MHz |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +200 C |
| maximum operating temperature (°c) | 200 |
| maximum power dissipation | 1.2 W |
| maximum power dissipation (mw) | 1200 |
| maximum transition frequency (mhz) | 120(Typ) |
| minimum dc current gain | 100@10mA@1V|100@1A@1V|75@4A@1V|10@10A@1V |
| minimum operating temperature | -55 C |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Through Hole |
| mounting style | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of elements per chip | 1 |
| package / case | TO-92-3 |
| package / case: | TO-92-3 |
| package type | TO-92 |
| packaging | Bulk |
| packaging: | Bulk |
| партномер | 8001989036 |
| part status | active |
| pcb changed | 3 |
| pd - power dissipation | 1.2 W |
| pd - power dissipation: | 1.2 W |
| pin count | 3 |
| ppap | No |
| product category | Bipolar Transistors-BJT |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| rohs | Details |
| series | ZTX951 |
| series: | ZTX951 |
| standard package name | TO-92 |
| subcategory: | Transistors |
| supplier package | E-Line |
| technology: | Si |
| transistor configuration | Single |
| transistor polarity | PNP |
| transistor polarity: | PNP |
| transistor type | PNP |
| type | PNP |
| unit weight | 0.015873 oz |
| Время загрузки | 0:10:15 |
| width | 2.41 mm |
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