ZTX651, Bipolar Transistors - BJT NPN Super E-Line

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Артикул: ZTX651
Электронные компоненты Транзисторы Биполярные (BJTs) Diodes ZTX651, Bipolar Transistors - BJT NPN Super E-Line
Дата загрузки23.02.2024
Вес и габариты
вес, г0.45
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
260
+
Бонус: 5.2 !
Бонусная программа
Итого: 260
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTRANSISTOR, NPN, 60V, 2A, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:175MHz; Power Dissipation Pd:1W; DC Collector Current:2A; DC Current Gain hFE:100hFE; Transistor Case Style:TO-92; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:2A; Current Ic @ Vce Sat:2A; Current Ic Continuous a Max:2A; Current Ic hFE:500mA; Gain Bandwidth ft Min:140MHz; Gain Bandwidth ft Typ:175MHz; Hfe Min:100; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +200°C; Pin Configuration:e; Power Dissipation Ptot Max:1W; Voltage Vcbo:80V
Дата загрузки23.02.2024
Вес и габариты
вес, г0.45
Информация о производителе
ПроизводительDIODES INC.
БрендDIODES INC.
Основные
categoryBipolar Power
collector- base voltage vcbo:80 V
collector current2A
collector-emitter saturation voltage:230 mV
collector- emitter voltage vceo max:60 V
configurationSingle
configuration:Single
continuous collector current:2 A
emitter- base voltage vebo:7 V
factory pack quantity: factory pack quantity:4000
frequency175(MHz)
frequency (max)175 MHz
gain bandwidth product ft:175 MHz
категорияЭлектронные компоненты/Транзисторы
manufacturerDiodes Incorporated
manufacturer:Diodes Incorporated
maximum collector base voltage80 V
maximum collector emitter voltage60 V
maximum dc collector current2 A
maximum dc collector current:2 A
maximum emitter base voltage5 V
maximum operating frequency175 MHz
maximum operating temperature+200 °C
maximum operating temperature:+200 C
maximum power dissipation1 W
minimum dc current gain100
minimum operating temperature:-55 C
mountingThrough Hole
mounting style:Through Hole
mounting typeThrough Hole
number of elements1
number of elements per chip1
operating temperature classificationMilitary
operating temp range-55C to 200C
output powerNot Required(W)
package/case:TO-92-3
package typeE-Line
packaging:Bulk
партномер8004841849
pd - power dissipation:1 W
pin count3
power dissipation1.5(W)
product category:Bipolar Transistors-BJT
product type:BJTs-Bipolar Transistors
rad hardenedNo
series:ZTX651
subcategory:Transistors
technology:Si
transistor configurationSingle
transistor polarityNPN
transistor polarity:NPN
transistor typeNPN
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