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Trans GP BJT NPN/PNP 100V 2A 2750mW 8-Pin SM8 T/R
Дата загрузки | 23.02.2024 |
Информация о производителе | |
Производитель | DIODES INC. |
Бренд | DIODES INC. |
Основные | |
automotive | No |
collector- base voltage vcbo | 120 V |
collector- base voltage vcbo: | 120 V |
collector-emitter saturation voltage | 0.23 V |
collector-emitter saturation voltage: | 230 mV, 300 mV |
collector- emitter voltage vceo max | 100 V |
collector- emitter voltage vceo max: | 100 V |
configuration | Dual |
configuration: | Dual |
continuous collector current | 2 A |
continuous collector current: | 2 A |
eccn (us) | EAR99 |
emitter- base voltage vebo | 6 V |
emitter- base voltage vebo: | 7 V |
eu rohs | Compliant with Exemption |
factory pack quantity | 1000 |
factory pack quantity: factory pack quantity: | 1000 |
gain bandwidth product ft | 175 MHz |
gain bandwidth product ft: | 175 MHz, 140 MHz |
категория | Электронные компоненты/Транзисторы |
manufacturer | Diodes Incorporated |
manufacturer: | Diodes Incorporated |
maximum base emitter saturation voltage (v) | 1.25@100mA@1A |
maximum collector base voltage (v) | 120 |
maximum collector-emitter saturation voltage (v) | 0.3@100mA@1A|0.5@200mA@2A |
maximum collector-emitter voltage (v) | 100 |
maximum dc collector current | 2 A |
maximum dc collector current: | 2 A |
maximum dc collector current (a) | 2 |
maximum emitter base voltage (v) | 7 |
maximum operating temperature | +150 C |
maximum operating temperature: | +150 C |
maximum operating temperature (°c) | 150 |
maximum power dissipation (mw) | 2750 |
maximum transition frequency (mhz) | 175(Typ) |
minimum dc current gain | 70@50mA@2V|100@500mA@2V|55@1A@2V|25@2A@2V |
minimum operating temperature | -55 C |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Surface Mount |
mounting style | SMD/SMT |
mounting style: | SMD/SMT |
number of elements per chip | 2 |
package / case | SM-8 |
package / case: | SM-8 |
packaging | Cut Tape or Reel |
партномер | 8007523146 |
part status | Active |
pcb changed | 8 |
pd - power dissipation | 2.75 W |
pd - power dissipation: | 2.75 W |
pin count | 8 |
ppap | No |
product category | Bipolar Transistors-BJT |
product category: | Bipolar Transistors-BJT |
product type | BJTs-Bipolar Transistors |
product type: | BJTs-Bipolar Transistors |
series | ZDT6753 |
series: | ZDT6753 |
subcategory | Transistors |
subcategory: | Transistors |
supplier package | SM8 |
technology: | Si |
transistor polarity | NPN, PNP |
transistor polarity: | NPN, PNP |
type | NPN|PNP |
Время загрузки | 0:04:22 |
Отзывов нет
Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26