VP0106N3-G, Транзистор P-МОП, -60В, -500мА, 1Вт, TO92
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Артикул: VP0106N3-G
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P-канал 60 В 250 мА (Tj) 1 Вт (Tc) сквозное отверстие TO-92-3
| Дата загрузки | 22.02.2024 |
| Вес и габариты | |
| вес, г | 0.21 |
| Информация о производителе | |
| Производитель | Microchip Technology |
| Бренд | Microchip Technology |
| Основные | |
| automotive | No |
| base product number | VP0106 -> |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| channel type | P |
| configuration | Single |
| configuration: | Single |
| current - continuous drain (id) @ 25в°c | 250mA (Tj) |
| drain to source voltage (vdss) | 60V |
| drive voltage (max rds on, min rds on) | 5V, 10V |
| eccn | EAR99 |
| eccn (us) | EAR99 |
| eu rohs | Compliant |
| factory pack quantity: factory pack quantity: | 1000 |
| fall time: | 4 ns |
| fet type | P-Channel |
| forward transconductance - min: | 150 mS |
| htsus | 8541.29.0095 |
| id - continuous drain current: | 250 mA |
| input capacitance (ciss) (max) @ vds | 60pF @ 25V |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Formed |
| manufacturer: | Microchip |
| material | Si |
| maximum continuous drain current | 250 mA |
| maximum continuous drain current (a) | 0.25 |
| maximum drain source resistance | 8 Ω |
| maximum drain source resistance (mohm) | 8000@10V |
| maximum drain source voltage | 60 V |
| maximum drain source voltage (v) | 60 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage | 3.5V |
| maximum gate threshold voltage (v) | 03.05.2024 |
| maximum idss (ua) | 10 |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 1000 |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of channels: | 1 Channel |
| number of elements per chip | 1 |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Bulk |
| package / case | TO-226-3, TO-92-3 (TO-226AA) |
| package / case: | TO-92-3 |
| package type | TO-92 |
| packaging | Bag |
| packaging: | Bulk |
| партномер | 8002556062 |
| part status | Active |
| pcb changed | 3 |
| pcn packaging | http://www.microchip.com/mymicrochip/NotificationD |
| pd - power dissipation: | 1 W |
| pin count | 3 |
| power dissipation (max) | 1W (Tc) |
| ppap | No |
| process technology | DMOS |
| product category | Power MOSFET |
| product category: | MOSFET |
| product type: | MOSFET |
| rds on - drain-source resistance: | 8 Ohms |
| rds on (max) @ id, vgs | 8Ohm @ 500mA, 10V |
| reach status | REACH Unaffected |
| rise time: | 5 ns |
| rohs status | ROHS3 Compliant |
| series | VP0106 |
| standard package name | TO |
| subcategory: | MOSFETs |
| supplier device package | TO-92-3 |
| supplier package | TO-92 |
| technology | MOSFET (Metal Oxide) |
| technology: | Si |
| transistor polarity: | P-Channel |
| transistor type: | 1 P-Channel |
| type: | FET |
| typical fall time (ns) | 4 |
| typical input capacitance @ vds (pf) | 45@25V |
| typical output capacitance (pf) | 22 |
| typical rise time (ns) | 3 |
| typical turn-off delay time: | 8 ns |
| typical turn-off delay time (ns) | 8 |
| typical turn-on delay time: | 4 ns |
| typical turn-on delay time (ns) | 4 |
| vds - drain-source breakdown voltage: | 60 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs (max) | В±20V |
| vgs th - gate-source threshold voltage: | 1.5 V |
| vgs(th) (max) @ id | 3.5V @ 1mA |
| Время загрузки | 2:17:12 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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