TP2104N3-G, Транзистор P-МОП, -40В, -600мА, 740мВт, TO92
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Артикул: TP2104N3-G
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P-канал 40 В 175 мА (Tj) 740 мВт (Ta) сквозное отверстие TO-92-3
| Дата загрузки | 22.02.2024 |
| Вес и габариты | |
| вес, г | 0.22 |
| Информация о производителе | |
| Производитель | Microchip Technology |
| Бренд | Microchip Technology |
| Основные | |
| base product number | TP2104 -> |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| channel type | P |
| configuration | Single |
| configuration: | Single |
| current - continuous drain (id) @ 25в°c | 175mA (Tj) |
| drain to source voltage (vdss) | 40V |
| drive voltage (max rds on, min rds on) | 4.5V, 10V |
| eccn | EAR99 |
| factory pack quantity | 1000 |
| factory pack quantity: factory pack quantity: | 1000 |
| fall time | 4 ns |
| fall time: | 5 ns |
| fet type | P-Channel |
| forward diode voltage | 2V |
| forward transconductance - min: | 150 mmho |
| height | 5.33 mm |
| htsus | 8541.21.0095 |
| id - continuous drain current | -250 mA |
| id - continuous drain current: | 175 mA |
| input capacitance (ciss) (max) @ vds | 60pF @ 25V |
| категория | Электронные компоненты/Транзисторы |
| length | 5.21 mm |
| manufacturer | Microchip |
| manufacturer: | Microchip |
| maximum continuous drain current | 175 mA |
| maximum drain source resistance | 10 Ω |
| maximum drain source voltage | 40 V |
| maximum gate source voltage | -20 V, +20 V |
| maximum gate threshold voltage | 2V |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +150 C |
| maximum power dissipation | 740 mW |
| minimum operating temperature | -55 C |
| minimum operating temperature: | -55 C |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting style | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of channels | 1 Channel |
| number of channels: | 1 Channel |
| number of elements per chip | 1 |
| operating temperature | -55В°C ~ 150В°C (TJ) |
| package | Bulk |
| package / case | TO-226-3, TO-92-3 (TO-226AA) |
| package / case: | TO-92-3 |
| package type | TO-92 |
| packaging | Bulk |
| packaging: | Bulk |
| партномер | 8002552457 |
| pcn packaging | http://www.microchip.com/mymicrochip/NotificationD |
| pd - power dissipation | 740 mW |
| pd - power dissipation: | 740 mW |
| pin count | 3 |
| power dissipation (max) | 740mW (Ta) |
| product | MOSFET Small Signal |
| product: | MOSFET Small Signal |
| product category | MOSFET |
| product category: | MOSFET |
| product type: | MOSFET |
| rds on - drain-source resistance | 6 Ohms |
| rds on - drain-source resistance: | 10 Ohms |
| rds on (max) @ id, vgs | 6Ohm @ 500mA, 10V |
| reach status | REACH Unaffected |
| rise time | 4 ns |
| rise time: | 4 ns |
| rohs | Details |
| rohs status | ROHS3 Compliant |
| subcategory: | MOSFETs |
| supplier device package | TO-92-3 |
| technology | MOSFET (Metal Oxide) |
| technology: | Si |
| transistor configuration | Single |
| transistor material | Si |
| transistor polarity | P-Channel |
| transistor polarity: | P-Channel |
| transistor type | 1 P-Channel |
| transistor type: | 1 P-Channel |
| type | FET |
| type: | FET |
| typical turn-off delay time | 5 ns |
| typical turn-off delay time: | 5 ns |
| typical turn-on delay time | 4 ns |
| typical turn-on delay time: | 4 ns |
| unit weight | 0.016 oz |
| vds - drain-source breakdown voltage | -40 V |
| vds - drain-source breakdown voltage: | 40 V |
| vgs - gate-source voltage | 20 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs (max) | В±20V |
| vgs th - gate-source threshold voltage: | 1 V |
| vgs(th) (max) @ id | 2V @ 1mA |
| Время загрузки | 2:13:58 |
| width | 4.19 mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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