TP0606N3-G, Транзистор P-МОП, -60В, -1,5А, TO92
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Артикул: TP0606N3-G
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This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process.
| Дата загрузки | 22.02.2024 |
| Вес и габариты | |
| вес, г | 0.22 |
| Информация о производителе | |
| Производитель | Microchip Technology |
| Бренд | Microchip Technology |
| Основные | |
| automotive | No |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| channel type | P |
| configuration | Single |
| configuration: | Single |
| eccn (us) | EAR99 |
| eu rohs | Compliant |
| factory pack quantity: factory pack quantity: | 1000 |
| fall time: | 15 ns |
| forward transconductance - min: | 300 mS |
| id - continuous drain current: | 320 mA |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Formed |
| manufacturer: | Microchip |
| material | Si |
| maximum continuous drain current (a) | 0.32 |
| maximum diode forward voltage (v) | 01.08.2024 |
| maximum drain source resistance (mohm) | 3500@10V |
| maximum drain source voltage (v) | 60 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 02.04.2024 |
| maximum idss (ua) | 10 |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum positive gate source voltage (v) | 20 |
| maximum power dissipation (mw) | 1000 |
| maximum pulsed drain current @ tc=25°c (a) | 03.05.2024 |
| minimum gate threshold voltage (v) | 1 |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of channels: | 1 Channel |
| number of elements per chip | 1 |
| package / case: | TO-92-3 |
| packaging | Bag |
| packaging: | Bulk |
| партномер | 8002545651 |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation: | 1 W |
| pin count | 3 |
| ppap | No |
| process technology | VDMOS |
| product category | Power MOSFET |
| product category: | MOSFET |
| product type: | MOSFET |
| rds on - drain-source resistance: | 3.5 Ohms |
| rise time: | 15 ns |
| standard package name | TO |
| subcategory: | MOSFETs |
| supplier package | TO-92 |
| technology: | Si |
| transistor polarity: | P-Channel |
| transistor type: | 1 P-Channel |
| type: | FET |
| typical fall time (ns) | 15(Max) |
| typical gate plateau voltage (v) | 01.07.2024 |
| typical input capacitance @ vds (pf) | 80@25V |
| typical output capacitance (pf) | 50 |
| typical reverse recovery time (ns) | 300 |
| typical reverse transfer capacitance @ vds (pf) | 15@25V |
| typical rise time (ns) | 15(Max) |
| typical turn-off delay time: | 20 ns |
| typical turn-off delay time (ns) | 20(Max) |
| typical turn-on delay time: | 10 ns |
| typical turn-on delay time (ns) | 10(Max) |
| vds - drain-source breakdown voltage: | 60 V |
| vgs - gate-source voltage: | -20 V, +20 V |
| vgs th - gate-source threshold voltage: | 1 V |
| Время загрузки | 2:13:59 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
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