| Дата загрузки | 21.02.2024 |
| Вес и габариты | |
| вес, г | 2.704 |
| Информация о производителе | |
| Производитель | ON Semiconductor*** |
| Бренд | ON Semiconductor*** |
| Основные | |
| automotive | No |
| collector- base voltage vcbo | 100 V |
| collector- base voltage vcbo: | 100 V |
| collector-emitter saturation voltage | 0.7 V |
| collector-emitter saturation voltage: | 700 mV |
| collector- emitter voltage vceo max | 100 V |
| collector- emitter voltage vceo max: | 100 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current | 1 A |
| continuous collector current: | 1 A |
| dc collector/base gain hfe min | 40 |
| dc collector/base gain hfe min: | 40 |
| eccn (us) | ear99 |
| emitter- base voltage vebo | 5 V |
| emitter- base voltage vebo: | 5 V |
| eu rohs | Compliant with Exemption |
| factory pack quantity | 50 |
| factory pack quantity: factory pack quantity: | 50 |
| gain bandwidth product ft | 3 MHz |
| gain bandwidth product ft: | 3 MHz |
| height | 15.75 mm |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Through Hole |
| length | 10.53 mm |
| manufacturer | ON Semiconductor |
| manufacturer: | onsemi |
| material | Si |
| maximum collector base voltage | 100 V dc |
| maximum collector base voltage (v) | 100 |
| maximum collector-emitter saturation voltage (v) | 0.7 125mA 1A |
| maximum collector emitter voltage | 100 V |
| maximum collector-emitter voltage (v) | 100 |
| maximum dc collector current | 1 A |
| maximum dc collector current: | 1 A |
| maximum dc collector current (a) | 1 |
| maximum emitter base voltage | 5 V |
| maximum emitter base voltage (v) | 5 |
| maximum operating frequency | 1 MHz |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation | 30 W |
| maximum power dissipation (mw) | 2000 |
| maximum transition frequency (mhz) | 3(Min) |
| minimum dc current gain | 40 200mA 4V|15 1A 4V |
| minimum operating temperature | -65 C |
| minimum operating temperature: | -65 C |
| minimum operating temperature (°c) | -65 |
| mounting | Through Hole |
| mounting style | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of elements per chip | 1 |
| package / case | TO-220-3 |
| package / case: | TO-220-3 |
| package type | TO-220 |
| packaging | Tube |
| packaging: | Tube |
| партномер | 8007112729 |
| part status | active |
| pcb changed | 3 |
| pd - power dissipation | 2 W |
| pd - power dissipation: | 30 W |
| pin count | 3 |
| ppap | No |
| product category | Bipolar Transistors-BJT |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| rohs | Details |
| series | TIP29C |
| series: | TIP29C |
| standard package name | TO-220 |
| subcategory: | Transistors |
| supplier package | TO-220AB |
| tab | Tab |
| technology: | Si |
| transistor configuration | Single |
| transistor polarity | NPN |
| transistor polarity: | NPN |
| transistor type | NPN |
| type | NPN |
| unit weight | 0.211644 oz |
| Время загрузки | 0:59:16 |
| width | 4.83 mm |
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