SI7615ADN-T1-GE3, МОП-транзистор, P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
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Артикул: SI7615ADN-T1-GE3
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транзисторы биполярные импортныеTrans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
| Вес и габариты | |
| automotive | No |
| channel mode | Enhancement |
| channel type | P |
| configuration | Single Quad Drain Triple Source |
| eccn (us) | EAR99 |
| eu rohs | Compliant with Exemption |
| lead shape | No Lead |
| maximum continuous drain current (a) | 35 |
| maximum continuous drain current on pcb @ tc=25°c (a) | 22.1 |
| maximum diode forward voltage (v) | 1.1 |
| maximum drain source resistance (mohm) | 4.4 10V |
| maximum drain source voltage (v) | 20 |
| maximum gate resistance (ohm) | 4 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±12 |
| maximum gate threshold voltage (v) | 1.5 |
| maximum idss (ua) | 1 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 81 |
| maximum operating temperature (°c) | 150 |
| maximum positive gate source voltage (v) | 12 |
| maximum power dissipation (mw) | 3700 |
| maximum power dissipation on pcb @ tc=25°c (w) | 3.7 |
| maximum pulsed drain current @ tc=25°c (a) | 80 |
| minimum gate resistance (ohm) | 0.4 |
| minimum gate threshold voltage (v) | 0.4 |
| minimum operating temperature (°c) | -55 |
| mounting | Surface Mount |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 150 |
| packaging | Tape and Reel |
| part status | Active |
| pcb changed | 8 |
| pin count | 8 |
| ppap | No |
| process technology | TrenchFET |
| product category | Power MOSFET |
| standard package name | PowerPAK 1212 |
| supplier package | PowerPAK 1212 |
| typical diode forward voltage (v) | 0.72 |
| typical fall time (ns) | 26 |
| typical gate charge @ 10v (nc) | 122 |
| typical gate charge @ vgs (nc) | 59 4.5V|122 10V |
| typical gate plateau voltage (v) | 1.8 |
| typical gate to drain charge (nc) | 14.2 |
| typical gate to source charge (nc) | 9.1 |
| typical input capacitance @ vds (pf) | 5590 10V |
| typical output capacitance (pf) | 640 |
| typical reverse recovery charge (nc) | 11 |
| typical reverse recovery time (ns) | 27 |
| typical reverse transfer capacitance @ vds (pf) | 655 10V |
| typical rise time (ns) | 40 |
| typical turn-off delay time (ns) | 75 |
| typical turn-on delay time (ns) | 41 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26