SI3585CDV-T1-GE3, транзистор MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R

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Артикул: SI3585CDV-T1-GE3
Электронные компоненты Транзисторы Биполярные (BJTs) Vishay SI3585CDV-T1-GE3, транзистор MOSFET N/P-CH ...
Дата загрузки12.02.2024
Вес и габариты
вес, г1
Информация о производителе
ПроизводительVISHAY INTERTECHNOLOGY INC.
БрендVISHAY INTERTECHNOLOGY INC.
75
+
Бонус: 1.5 !
Бонусная программа
Итого: 75
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транзисторы биполярные импортныеIntegrated MOSFET SolutionsVishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Дата загрузки12.02.2024
Вес и габариты
вес, г1
Информация о производителе
ПроизводительVISHAY INTERTECHNOLOGY INC.
БрендVISHAY INTERTECHNOLOGY INC.
Основные
channel modeEnhancement
channel mode:Enhancement
configurationDual
configuration:Dual
factory pack quantity3000
factory pack quantity: factory pack quantity:3000
fall time9 ns, 28 ns
fall time:9 ns, 28 ns
forward transconductance - min1 S, 12 S
forward transconductance - min:1 S, 12 S
id - continuous drain current2.1 A, 3.9 A
id - continuous drain current:2.1 A, 3.9 A
категорияЭлектронные компоненты/Транзисторы
manufacturerVishay
manufacturer:Vishay
maximum operating temperature+150 C
maximum operating temperature:+150 C
minimum operating temperature-55 C
minimum operating temperature:-55 C
mounting styleSMD/SMT
mounting style:SMD/SMT
number of channels2 Channel
number of channels:2 Channel
package / caseTSOP-6
package/case:TSOP-6
packagingCut Tape or Reel
packaging:Reel, Cut Tape, MouseReel
партномер8010023627
part # aliasesSI3585CDV-GE3
part # aliases:SI3585CDV-GE3
pd - power dissipation1.3 W, 1.4 W
pd - power dissipation:1.3 W, 1.4 W
product categoryMOSFET
product category:MOSFET
product typeMOSFET
product type:MOSFET
qg - gate charge3.2 nC, 6 nC
qg - gate charge:3.2 nC, 6 nC
rds on - drain-source resistance58 mOhms, 195 mOhms
rds on - drain-source resistance:58 mOhms, 195 mOhms
rise time16 ns, 37 ns
rise time:16 ns, 37 ns
seriesSI3
series:SI3
subcategoryMOSFETs
subcategory:MOSFETs
technologySi
technology:Si
tradenameTrenchFET
tradename:TrenchFET
transistor polarityN-Channel, P-Channel
transistor polarity:N-Channel, P-Channel
transistor type1 N-Channel, 1 P-Channel
transistor type:1 N-Channel, 1 P-Channel
typical turn-off delay time13 ns, 25 ns
typical turn-off delay time:13 ns, 25 ns
typical turn-on delay time15 ns, 16 ns
typical turn-on delay time:15 ns, 16 ns
vds - drain-source breakdown voltage20 V
vds - drain-source breakdown voltage:20 V
vgs - gate-source voltage4.5 V
vgs - gate-source voltage:-8 V, +8 V
vgs th - gate-source threshold voltage600 mV
vgs th - gate-source threshold voltage:600 mV
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