Дата загрузки | 20.02.2024 |
Вес и габариты | |
вес, г | 0.5 |
Информация о производителе | |
Производитель | ON Semiconductor*** |
Бренд | ON Semiconductor*** |
Основные | |
automotive | No |
collector- base voltage vcbo | 75 V |
collector- base voltage vcbo: | 75 V |
collector-emitter saturation voltage | 1 V |
collector-emitter saturation voltage: | 1 V |
collector- emitter voltage vceo max | 40 V |
collector- emitter voltage vceo max: | 40 V |
configuration | Single |
configuration: | Single |
continuous collector current | 1 A |
continuous collector current: | 1 A |
dc current gain hfe max | 300 |
dc current gain hfe max: | 300 |
eccn (us) | EAR99 |
emitter- base voltage vebo | 6 V |
emitter- base voltage vebo: | 6 V |
eu rohs | Compliant |
factory pack quantity | 1000 |
factory pack quantity: factory pack quantity: | 10000 |
gain bandwidth product ft | 300 MHz |
gain bandwidth product ft: | 300 MHz |
height | 4.7 mm |
категория | Электронные компоненты/Транзисторы |
lead shape | Through Hole |
length | 4.7 mm |
manufacturer | ON Semiconductor |
manufacturer: | onsemi |
maximum base emitter saturation voltage (v) | 1.2 15mA 150mA|2 50mA 500mA |
maximum collector base voltage | 75 V |
maximum collector base voltage (v) | 75 |
maximum collector cut-off current (na) | 10 |
maximum collector-emitter saturation voltage (v) | 0.3 15mA 150mA|1 50mA 500mA |
maximum collector emitter voltage | 40 V |
maximum collector-emitter voltage (v) | 40 |
maximum dc collector current | 1 A |
maximum dc collector current: | 1 A |
maximum dc collector current (a) | 1 |
maximum emitter base voltage | 6 V |
maximum emitter base voltage (v) | 6 |
maximum operating frequency | 300 MHz |
maximum operating temperature | +150 C |
maximum operating temperature: | +150 C |
maximum operating temperature (°c) | 150 |
maximum power dissipation | 625 mW |
maximum power dissipation (mw) | 625 |
maximum transition frequency (mhz) | 300(Min) |
minimum operating temperature | -55 C |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Through Hole |
mounting style | Through Hole |
mounting style: | Through Hole |
mounting type | Through Hole |
number of elements per chip | 1 |
operating junction temperature (°c) | -55 to 150 |
package / case | TO-92-3 |
package/case: | TO-92-3 |
package type | TO-92 |
packaging | Bulk |
packaging: | Bulk |
партномер | 8007894541 |
part status | Active |
pcb changed | 3 |
pd - power dissipation | 625 mW |
pd - power dissipation: | 625 mW |
pin count | 3 |
ppap | No |
product category | Bipolar Transistors-BJT |
product category: | Bipolar Transistors-BJT |
product type: | BJTs-Bipolar Transistors |
rohs | Details |
series | PN2222A |
series: | PN2222A |
standard package name | TO-92 |
subcategory: | Transistors |
supplier package | TO-92 |
technology: | Si |
transistor configuration | Single |
transistor polarity | NPN |
transistor polarity: | NPN |
transistor type | NPN |
type | NPN |
unit weight | 0.006314 oz |
Время загрузки | 2:01:50 |
width | 3.93 mm |