PN2222ABU, Bipolar Transistors - BJT NPN Transistor General Purpose

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Артикул: PN2222ABU
Электронные компоненты Транзисторы Биполярные (BJTs) ON Semiconductor PN2222ABU, Bipolar Transistors - BJT NPN ...
ON Semiconductor***
Дата загрузки20.02.2024
Вес и габариты
вес, г0.2
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
130
+
Бонус: 2.6 !
Бонусная программа
Итого: 130
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTrans GP BJT NPN 40V 1A 625mW 3-Pin TO-92 Bag
Дата загрузки20.02.2024
Вес и габариты
вес, г0.2
Информация о производителе
ПроизводительON Semiconductor***
БрендON Semiconductor***
Основные
automotiveNo
collector- base voltage vcbo75 V
collector- base voltage vcbo:75 V
collector-emitter saturation voltage1 V
collector-emitter saturation voltage:1 V
collector- emitter voltage vceo max40 V
collector- emitter voltage vceo max:40 V
configurationSingle
configuration:Single
continuous collector current1 A
continuous collector current:1 A
dc current gain hfe max300
dc current gain hfe max:300
eccn (us)EAR99
emitter- base voltage vebo6 V
emitter- base voltage vebo:6 V
eu rohsCompliant
factory pack quantity1000
factory pack quantity: factory pack quantity:10000
gain bandwidth product ft300 MHz
gain bandwidth product ft:300 MHz
height4.7 mm
категорияЭлектронные компоненты/Транзисторы
lead shapeThrough Hole
length4.7 mm
manufacturerON Semiconductor
manufacturer:onsemi
maximum base emitter saturation voltage (v)1.2 15mA 150mA|2 50mA 500mA
maximum collector base voltage75 V
maximum collector base voltage (v)75
maximum collector cut-off current (na)10
maximum collector-emitter saturation voltage (v)0.3 15mA 150mA|1 50mA 500mA
maximum collector emitter voltage40 V
maximum collector-emitter voltage (v)40
maximum dc collector current1 A
maximum dc collector current:1 A
maximum dc collector current (a)1
maximum emitter base voltage6 V
maximum emitter base voltage (v)6
maximum operating frequency300 MHz
maximum operating temperature+150 C
maximum operating temperature:+150 C
maximum operating temperature (°c)150
maximum power dissipation625 mW
maximum power dissipation (mw)625
maximum transition frequency (mhz)300(Min)
minimum operating temperature-55 C
minimum operating temperature:-55 C
minimum operating temperature (°c)-55
mountingThrough Hole
mounting styleThrough Hole
mounting style:Through Hole
mounting typeThrough Hole
number of elements per chip1
operating junction temperature (°c)-55 to 150
package / caseTO-92-3
package/case:TO-92-3
package typeTO-92
packagingBag
packaging:Bulk
партномер8004674168
part statusActive
pcb changed3
pd - power dissipation625 mW
pd - power dissipation:625 mW
pin count3
ppapNo
product categoryBipolar Small Signal
product category:Bipolar Transistors-BJT
product type:BJTs-Bipolar Transistors
rohsDetails
seriesPN2222A
series:PN2222A
standard package nameTO-92
subcategory:Transistors
supplier packageTO-92
technology:Si
transistor configurationSingle
transistor polarityNPN
transistor polarity:NPN
transistor typeNPN
typeNPN
unit weight0.006314 oz
Время загрузки2:10:24
width3.93 mm
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