PN2222ABU, Bipolar Transistors - BJT NPN Transistor General Purpose
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Артикул: PN2222ABU
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Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJTTrans GP BJT NPN 40V 1A 625mW 3-Pin TO-92 Bag
Дата загрузки | 20.02.2024 |
Вес и габариты | |
вес, г | 0.2 |
Информация о производителе | |
Производитель | ON Semiconductor*** |
Бренд | ON Semiconductor*** |
Основные | |
automotive | No |
collector- base voltage vcbo | 75 V |
collector- base voltage vcbo: | 75 V |
collector-emitter saturation voltage | 1 V |
collector-emitter saturation voltage: | 1 V |
collector- emitter voltage vceo max | 40 V |
collector- emitter voltage vceo max: | 40 V |
configuration | Single |
configuration: | Single |
continuous collector current | 1 A |
continuous collector current: | 1 A |
dc current gain hfe max | 300 |
dc current gain hfe max: | 300 |
eccn (us) | EAR99 |
emitter- base voltage vebo | 6 V |
emitter- base voltage vebo: | 6 V |
eu rohs | Compliant |
factory pack quantity | 1000 |
factory pack quantity: factory pack quantity: | 10000 |
gain bandwidth product ft | 300 MHz |
gain bandwidth product ft: | 300 MHz |
height | 4.7 mm |
категория | Электронные компоненты/Транзисторы |
lead shape | Through Hole |
length | 4.7 mm |
manufacturer | ON Semiconductor |
manufacturer: | onsemi |
maximum base emitter saturation voltage (v) | 1.2 15mA 150mA|2 50mA 500mA |
maximum collector base voltage | 75 V |
maximum collector base voltage (v) | 75 |
maximum collector cut-off current (na) | 10 |
maximum collector-emitter saturation voltage (v) | 0.3 15mA 150mA|1 50mA 500mA |
maximum collector emitter voltage | 40 V |
maximum collector-emitter voltage (v) | 40 |
maximum dc collector current | 1 A |
maximum dc collector current: | 1 A |
maximum dc collector current (a) | 1 |
maximum emitter base voltage | 6 V |
maximum emitter base voltage (v) | 6 |
maximum operating frequency | 300 MHz |
maximum operating temperature | +150 C |
maximum operating temperature: | +150 C |
maximum operating temperature (°c) | 150 |
maximum power dissipation | 625 mW |
maximum power dissipation (mw) | 625 |
maximum transition frequency (mhz) | 300(Min) |
minimum operating temperature | -55 C |
minimum operating temperature: | -55 C |
minimum operating temperature (°c) | -55 |
mounting | Through Hole |
mounting style | Through Hole |
mounting style: | Through Hole |
mounting type | Through Hole |
number of elements per chip | 1 |
operating junction temperature (°c) | -55 to 150 |
package / case | TO-92-3 |
package/case: | TO-92-3 |
package type | TO-92 |
packaging | Bag |
packaging: | Bulk |
партномер | 8004674168 |
part status | Active |
pcb changed | 3 |
pd - power dissipation | 625 mW |
pd - power dissipation: | 625 mW |
pin count | 3 |
ppap | No |
product category | Bipolar Small Signal |
product category: | Bipolar Transistors-BJT |
product type: | BJTs-Bipolar Transistors |
rohs | Details |
series | PN2222A |
series: | PN2222A |
standard package name | TO-92 |
subcategory: | Transistors |
supplier package | TO-92 |
technology: | Si |
transistor configuration | Single |
transistor polarity | NPN |
transistor polarity: | NPN |
transistor type | NPN |
type | NPN |
unit weight | 0.006314 oz |
Время загрузки | 2:10:24 |
width | 3.93 mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26