| Дата загрузки | 20.02.2024 |
| Вес и габариты | |
| вес, г | 0.5 |
| Информация о производителе | |
| Производитель | ON Semiconductor*** |
| Бренд | ON Semiconductor*** |
| Основные | |
| automotive | No |
| collector- base voltage vcbo | 75 V |
| collector- base voltage vcbo: | 75 V |
| collector-emitter saturation voltage | 1 V |
| collector-emitter saturation voltage: | 1 V |
| collector- emitter voltage vceo max | 40 V |
| collector- emitter voltage vceo max: | 40 V |
| configuration | Single |
| configuration: | Single |
| continuous collector current | 1 A |
| continuous collector current: | 1 A |
| dc current gain hfe max | 300 |
| dc current gain hfe max: | 300 |
| eccn (us) | ear99 |
| emitter- base voltage vebo | 6 V |
| emitter- base voltage vebo: | 6 V |
| eu rohs | compliant |
| factory pack quantity | 1000 |
| factory pack quantity: factory pack quantity: | 10000 |
| gain bandwidth product ft | 300 MHz |
| gain bandwidth product ft: | 300 MHz |
| height | 4.7 mm |
| категория | Электронные компоненты/Транзисторы |
| lead shape | Through Hole |
| length | 4.7 mm |
| manufacturer | ON Semiconductor |
| manufacturer: | onsemi |
| maximum base emitter saturation voltage (v) | 1.2 15mA 150mA|2 50mA 500mA |
| maximum collector base voltage | 75 V |
| maximum collector base voltage (v) | 75 |
| maximum collector cut-off current (na) | 10 |
| maximum collector-emitter saturation voltage (v) | 0.3 15mA 150mA|1 50mA 500mA |
| maximum collector emitter voltage | 40 V |
| maximum collector-emitter voltage (v) | 40 |
| maximum dc collector current | 1 A |
| maximum dc collector current: | 1 A |
| maximum dc collector current (a) | 1 |
| maximum emitter base voltage | 6 V |
| maximum emitter base voltage (v) | 6 |
| maximum operating frequency | 300 MHz |
| maximum operating temperature | +150 C |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation | 625 mW |
| maximum power dissipation (mw) | 625 |
| maximum transition frequency (mhz) | 300(Min) |
| minimum operating temperature | -55 C |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Through Hole |
| mounting style | Through Hole |
| mounting style: | Through Hole |
| mounting type | Through Hole |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 150 |
| package / case | TO-92-3 |
| package/case: | TO-92-3 |
| package type | TO-92 |
| packaging | Bulk |
| packaging: | Bulk |
| партномер | 8007894541 |
| part status | active |
| pcb changed | 3 |
| pd - power dissipation | 625 mW |
| pd - power dissipation: | 625 mW |
| pin count | 3 |
| ppap | No |
| product category | Bipolar Transistors-BJT |
| product category: | Bipolar Transistors-BJT |
| product type: | BJTs-Bipolar Transistors |
| rohs | Details |
| series | PN2222A |
| series: | PN2222A |
| standard package name | TO-92 |
| subcategory: | Transistors |
| supplier package | TO-92 |
| technology: | Si |
| transistor configuration | Single |
| transistor polarity | NPN |
| transistor polarity: | NPN |
| transistor type | NPN |
| type | NPN |
| unit weight | 0.006314 oz |
| Время загрузки | 2:01:50 |
| width | 3.93 mm |
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