Name: PMBT3906M,315, Trans GP BJT PNP 40V 0.2A 590mW Automotive 3-Pin DFN T/R
SKU: PMBT3906M,315

Вес и габариты
collector- base voltage vcbo:	40 V
collector-emitter breakdown voltage	40V
collector-emitter saturation voltage:	165 mV

6 ₽

– +

Бонус: 0.12 !

Бонусная программа

Итого: 6 ₽

Купить

► Купить PMBT3906M,315, Trans GP BJT PNP 40V 0.2A 590mW Automotive 3-Pin DFN T/R в интернет-магазине ООО «Телеметрия».

■ Категория: Транзисторы биполярные

★ Цена: 6 руб.

Почему выбирают нас:

☎ Заказать: +7 (929) 433-44-45

Вес и габариты
collector- base voltage vcbo:	40 V
collector-emitter breakdown voltage	40V
collector-emitter saturation voltage:	165 mV
collector- emitter voltage vceo max:	40 V
configuration:	Single
continuous collector current:	-200 mA
dc collector/base gain hfe min:	180
dc current gain hfe max:	60 at 100 uA, 1 V
emitter- base voltage vebo:	6 V
factory pack quantity: factory pack quantity:	10000
gain bandwidth product ft:	250 MHz
manufacturer:	Nexperia
maximum dc collector current	200mA
maximum dc collector current:	200 mA
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
package/case:	DFN1006-3
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	934063476315
pd - power dissipation	590mW
pd - power dissipation:	590 mW
product category:	Bipolar Transistors-BJT
product type:	BJTs-Bipolar Transistors
qualification:	AEC-Q101
subcategory:	Transistors
technology:	Si
transistor polarity:	PNP
transistor type	PNP

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